| PART |
Description |
Maker |
| TC55VCM216ASTN40 TC55VCM216ASTN55 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55V4366FF TC55V4366FF-133 TC55V4366FF-150 TC55V4 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC58NVG0S3ETA00 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC55V2325FF TC55V2325FF-100 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55NEM216ASTV55 TC55NEM216ASTV70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
| TC554161AFTI-70 TC554161AFTI-10L TC554161AFTI-70L |
262,144-WORD BY 16-BIT STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| TC55NEM216AFTN55 TC55NEM216AFTN70 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TH58NVG1S3AFT05 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TPCP8002 |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
